Resonant Spin-dependent Tunneling in Spin-valve Junctions in the Presence of Paramagnetic

نویسندگان

  • A. Vedyayev
  • D. Bagrets
  • A. Bagrets
  • B. Dieny
چکیده

The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F’s are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both between the spin of impurity and the bulk magnetization of the neighboring magnetic electrode, and between the spin of impurity and the spin of tunneling electron. Consequently, the resonance levels of the system formed by a tunneling electron and a paramagnetic impurity with spin S = 1, are a sextet. As a result the resonant tunneling depends on the direction of the tunneling electron spin. At low temperatures and zero bias voltage the TMR of the considered system may be larger than TMR of the same structure without paramagnetic impurities. It is calculated that an increase in temperature leads to a decrease in the TMR amplitude due to excitation of spin-flip processes resulting in mixing of spin up and down channels. It is also shown that asymmetry in the location of the impurities within the barrier can lead to asymmetry in I(V ) characteristics of impurity assisted current and two mechanisms responsible for the origin of this effect are established. The first one is due to the excitation of spin-flip processes at low voltages and the second one arises from the shift of resonant levels inside the insulator layer under high applied voltages.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Coupling effects of layers on spin transport in ZnSe/Zn1−xMnxSe heterostructures

By use of the scattering matrix method, we investigate the coupling effects of layers on spinpolarized transport through semimagnetic semiconductor heterostructures with triple paramagnetic layers. Due to the coupling between double non-magnetic layers or among triple paramagnetic layers, spin tunneling exhibits interesting and complex features, which are determined by the structural configurat...

متن کامل

MAGNETISATION AND ELECTRON SPIN RESONANCE STUDIES OF TETRAHEDRAL AMORPHOUS CARBON

The magnetisation and electron spin resonance (ESR) spectrum of two specimens of tetrahedral amorphous carbon (ta-C), deposited from a filtered cathodic arc, were measured over a wide temperature range. The magnetisation was found to consist of superparamagnetic, paramagnetic and diamagnetic contributions. The superparamagnetic contribution resembled that recently found in carbon prepared from ...

متن کامل

Demystifying EPR: A Rookie Guide to the Application of Electron Paramagnetic Resonance Spectroscopy on Biomolecules

Electron Paramagnetic Resonance (EPR) spectroscopy, also known as Electron Spin Resonance(ESR) especially among physicists, is a strong and versatile spectroscopic method forinvestigation of paramagnetic systems, i.e. systems like free radicals and most transition metalions, which have unpaired electrons. The sensitivity and selectivity of EPR are notable andintriguing as compared to other spec...

متن کامل

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films.

Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increas...

متن کامل

Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations.

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2000